high-electron-mobility transistors
常见例句
- Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。 返回 high-electron-mobility transistors