high resolution transmission electron microscopy

基本解释

High resolution transmission electron microscopy(HRTEM) and x-ray diffraction analysis (XRD) were used to characterize the morphologies and micro-structures of the products.
用高分辨透射電子顯微鏡（HRTEM）、X射線衍射儀（XRD）對産物進行表征。
Using high resolution transmission electron microscopy, nanometer Si particles and nanometer Ge particles were observed in the SSO and GSO films, respectively, after annealing at 900 or 1100℃.
使用高分辨透射電子顯微鏡可以觀察到經90 0和110 0℃退火的含納米矽的氧化矽薄膜中的納米矽粒，和經90 0和110 0℃退火的含納米鍺的氧化矽薄膜中的納米鍺粒。
X ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) are used to analyze the synthesized GaN nanorods.
用X射線衍射（XRD）、掃描電鏡（SEM）、高分辨率透射電鏡（HRTEM）和光致發光光譜（PL）對生成的産物進行了分析。