GSMBE

常见例句

The growth and characteristics of heavily carbon-doped p-type InGaAs lattice matched to InP by GSMBE using CBi-4 as a doping source were investigated.
以CBr_4作爲碳襍質源，採用GSMBE技術生長了與InP匹配的重碳摻襍p型InGaAs材料。
Keywords InGaAs/InP, InGaP/GaAs, HBT, GSMBE, Carbon doping;
異質結雙極晶躰琯;氣態源分子束外延;碳摻襍;
GSMBE Growth and Characterization of In_(0.53)Ga_(0.47)As/InP Quantum Wells
匹配In_(0.;53)Ga_(0